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| Hauptseite > Publikationsdatenbank > Ion Implantation of Graphene—Toward IC Compatible Technologies > print |
| Hauptseite > Publikationsdatenbank > Ion Implantation of Graphene—Toward IC Compatible Technologies > print |
| 001 | 201546 | ||
| 005 | 20240610120421.0 | ||
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| 100 | 1 | _ | |a Bangert, U. |0 P:(DE-HGF)0 |b 0 |e Corresponding Author |
| 245 | _ | _ | |a Ion Implantation of Graphene—Toward IC Compatible Technologies |
| 260 | _ | _ | |a Washington, DC |c 2013 |b ACS Publ. |
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| 520 | _ | _ | |a Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for graphene functionalization compatible with large-scale integrated semiconductor technology. Using advanced electron microscopy/spectroscopy methods, we show for the first time directly that graphene can be doped with B and N via ion implantation and that the retention is in good agreement with predictions from calculation-based literature values. Atomic resolution high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites. |
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