Journal Article

FZJ-2015-04182

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Compact modeling of CRS devices based on ECM cells for memory, logic and neuromorphic applications

Linn, E. (Corresponding Author) ; Menzel, S. (Corresponding Author)FZJ* ; Ferch, S. ; Waser, R.FZJ*

2013
IOP Publ. Bristol

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Please use a persistent id in citations: doi:10.1088/0957-4484/24/38/384008

Abstract: Dynamic physics-based models of resistive switching devices are of great interest for the realization of complex circuits required for memory, logic and neuromorphic applications. Here, we apply such a model of an electrochemical metallization (ECM) cell to complementary resistive switches (CRSs), which are favorable devices to realize ultra-dense passive crossbar arrays. Since a CRS consists of two resistive switching devices, it is straightforward to apply the dynamic ECM model for CRS simulation with MATLAB and SPICE, enabling study of the device behavior in terms of sweep rate and series resistance variations. Furthermore, typical memory access operations as well as basic implication logic operations can be analyzed, revealing requirements for proper spike and level read operations. This basic understanding facilitates applications of massively parallel computing paradigms required for neuromorphic applications.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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