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000201892 1001_ $$0P:(DE-HGF)0$$aLinn, E.$$b0$$eCorresponding Author
000201892 245__ $$aCompact modeling of CRS devices based on ECM cells for memory, logic and neuromorphic applications
000201892 260__ $$aBristol$$bIOP Publ.$$c2013
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000201892 520__ $$aDynamic physics-based models of resistive switching devices are of great interest for the realization of complex circuits required for memory, logic and neuromorphic applications. Here, we apply such a model of an electrochemical metallization (ECM) cell to complementary resistive switches (CRSs), which are favorable devices to realize ultra-dense passive crossbar arrays. Since a CRS consists of two resistive switching devices, it is straightforward to apply the dynamic ECM model for CRS simulation with MATLAB and SPICE, enabling study of the device behavior in terms of sweep rate and series resistance variations. Furthermore, typical memory access operations as well as basic implication logic operations can be analyzed, revealing requirements for proper spike and level read operations. This basic understanding facilitates applications of massively parallel computing paradigms required for neuromorphic applications.
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000201892 7001_ $$0P:(DE-Juel1)158062$$aMenzel, S.$$b1$$eCorresponding Author
000201892 7001_ $$0P:(DE-HGF)0$$aFerch, S.$$b2
000201892 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b3
000201892 773__ $$0PERI:(DE-600)1362365-5$$a10.1088/0957-4484/24/38/384008$$gVol. 24, no. 38, p. 384008 -$$n38$$p384008 -$$tNanotechnology$$v24$$x1361-6528$$y2013
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000201892 9132_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
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