%0 Journal Article
%A Kim, Seong Keun
%A Hoffmann-Eifert, Susanne
%A Waser, R.
%T High Growth Rate in Atomic Layer Deposition of TiO$_{2}$ thin films by UV Irradiation
%J Electrochemical and solid-state letters
%V 14
%N 4
%@ 1099-0062
%C Pennington, NJ
%I Soc.
%M FZJ-2015-04183
%P H146 -
%D 2011
%X The exposure effect of the reaction surface to ultraviolet (UV) light was studied for atomic layer deposition (ALD) of TiO2 films from Ti(OiPr)4 and H2O at 260°C. UV light was irradiated on the reaction surface after the purge step of Ti-precursor and oxygen source, respectively. UV irradiation on the reaction surface resulted in a higher growth rate of the TiO2 films compared to the thermal ALD. The growth rate of anatase TiO2 increased by a factor of 2 to about 0.25 nm/cycle while the surface roughness was reduced. UV-light induced increase of the number of chemisorption sites is discussed as the possible mechanism. 
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000287408700014
%R 10.1149/1.3534833
%U https://juser.fz-juelich.de/record/201893