Journal Article

FZJ-2015-04183

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png High Growth Rate in Atomic Layer Deposition of TiO$_{2}$ thin films by UV Irradiation

Kim, S. K. (Corresponding Author) ; Hoffmann-Eifert, S.FZJ* ; Waser, R.FZJ*

2011
Soc. Pennington, NJ

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Please use a persistent id in citations: doi:10.1149/1.3534833

Abstract: The exposure effect of the reaction surface to ultraviolet (UV) light was studied for atomic layer deposition (ALD) of TiO2 films from Ti(OiPr)4 and H2O at 260°C. UV light was irradiated on the reaction surface after the purge step of Ti-precursor and oxygen source, respectively. UV irradiation on the reaction surface resulted in a higher growth rate of the TiO2 films compared to the thermal ALD. The growth rate of anatase TiO2 increased by a factor of 2 to about 0.25 nm/cycle while the surface roughness was reduced. UV-light induced increase of the number of chemisorption sites is discussed as the possible mechanism.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 424 - Exploratory materials and phenomena (POF2-424) (POF2-424)

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Database coverage:
IF < 5 ; JCR ; SCOPUS ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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