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000201893 1001_ $$0P:(DE-HGF)0$$aKim, Seong Keun$$b0$$eCorresponding Author
000201893 245__ $$aHigh Growth Rate in Atomic Layer Deposition of TiO$_{2}$ thin films by UV Irradiation
000201893 260__ $$aPennington, NJ$$bSoc.$$c2011
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000201893 520__ $$aThe exposure effect of the reaction surface to ultraviolet (UV) light was studied for atomic layer deposition (ALD) of TiO2 films from Ti(OiPr)4 and H2O at 260°C. UV light was irradiated on the reaction surface after the purge step of Ti-precursor and oxygen source, respectively. UV irradiation on the reaction surface resulted in a higher growth rate of the TiO2 films compared to the thermal ALD. The growth rate of anatase TiO2 increased by a factor of 2 to about 0.25 nm/cycle while the surface roughness was reduced. UV-light induced increase of the number of chemisorption sites is discussed as the possible mechanism. 
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000201893 7001_ $$0P:(DE-Juel1)130717$$aHoffmann-Eifert, Susanne$$b1
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