TY  - JOUR
AU  - Kim, Seong Keun
AU  - Hoffmann-Eifert, Susanne
AU  - Waser, R.
TI  - High Growth Rate in Atomic Layer Deposition of TiO$_{2}$ thin films by UV Irradiation
JO  - Electrochemical and solid-state letters
VL  - 14
IS  - 4
SN  - 1099-0062
CY  - Pennington, NJ
PB  - Soc.
M1  - FZJ-2015-04183
SP  - H146 -
PY  - 2011
AB  - The exposure effect of the reaction surface to ultraviolet (UV) light was studied for atomic layer deposition (ALD) of TiO2 films from Ti(OiPr)4 and H2O at 260°C. UV light was irradiated on the reaction surface after the purge step of Ti-precursor and oxygen source, respectively. UV irradiation on the reaction surface resulted in a higher growth rate of the TiO2 films compared to the thermal ALD. The growth rate of anatase TiO2 increased by a factor of 2 to about 0.25 nm/cycle while the surface roughness was reduced. UV-light induced increase of the number of chemisorption sites is discussed as the possible mechanism. 
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000287408700014
DO  - DOI:10.1149/1.3534833
UR  - https://juser.fz-juelich.de/record/201893
ER  -