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| Hauptseite > Publikationsdatenbank > High Growth Rate in Atomic Layer Deposition of TiO$_{2}$ thin films by UV Irradiation > print |
| Hauptseite > Publikationsdatenbank > High Growth Rate in Atomic Layer Deposition of TiO$_{2}$ thin films by UV Irradiation > print |
| 001 | 201893 | ||
| 005 | 20210129215939.0 | ||
| 024 | 7 | _ | |a 10.1149/1.3534833 |2 doi |
| 024 | 7 | _ | |a 1099-0062 |2 ISSN |
| 024 | 7 | _ | |a 1944-8775 |2 ISSN |
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| 037 | _ | _ | |a FZJ-2015-04183 |
| 082 | _ | _ | |a 540 |
| 100 | 1 | _ | |a Kim, Seong Keun |0 P:(DE-HGF)0 |b 0 |e Corresponding Author |
| 245 | _ | _ | |a High Growth Rate in Atomic Layer Deposition of TiO$_{2}$ thin films by UV Irradiation |
| 260 | _ | _ | |a Pennington, NJ |c 2011 |b Soc. |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1435647199_1776 |2 PUB:(DE-HGF) |
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| 520 | _ | _ | |a The exposure effect of the reaction surface to ultraviolet (UV) light was studied for atomic layer deposition (ALD) of TiO2 films from Ti(OiPr)4 and H2O at 260°C. UV light was irradiated on the reaction surface after the purge step of Ti-precursor and oxygen source, respectively. UV irradiation on the reaction surface resulted in a higher growth rate of the TiO2 films compared to the thermal ALD. The growth rate of anatase TiO2 increased by a factor of 2 to about 0.25 nm/cycle while the surface roughness was reduced. UV-light induced increase of the number of chemisorption sites is discussed as the possible mechanism. |
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| 773 | _ | _ | |a 10.1149/1.3534833 |g Vol. 14, no. 4, p. H146 - |0 PERI:(DE-600)1483551-4 |n 4 |p H146 - |t Electrochemical and solid-state letters |v 14 |y 2011 |x 1099-0062 |
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