%0 Journal Article
%A Markiewicz, Ewa
%A Szot, K.
%A Hilczer, Bożena
%A Pietraszko, Adam Andrzej
%T BiFeO $_{3}$ single crystal as resistive switching element for application in microelectronic devices
%J Phase transitions
%V 86
%N 2-3
%@ 1029-0338
%C London [u.a.]
%I Taylor & Francis
%M FZJ-2015-04197
%P 284 - 289
%D 2013
%X Local resistive switching was observed using AFM equipped with conducting tip addressing ∼15 unit cells in high-quality BiFeO3 single crystal grown from a non-stoichiometric melt. The switching appeared under high-vacuum conditions above 340 K and the studies at various temperatures yield the activation energy of 0.74 eV. The field-induced changes in the resistivity were ascribed to the presence of localized oxygen vacancies as a consequence of the mixed valence of Fe2+/Fe3+ ions.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000313414200022
%R 10.1080/01411594.2012.727262
%U https://juser.fz-juelich.de/record/201907