Journal Article

FZJ-2015-04197

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png BiFeO $_{3}$ single crystal as resistive switching element for application in microelectronic devices

Markiewicz, E. (Corresponding Author) ; Szot, K.FZJ* ; Hilczer, B. ; Pietraszko, A. A.

2013
Taylor & Francis London [u.a.]

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Please use a persistent id in citations: doi:10.1080/01411594.2012.727262

Abstract: Local resistive switching was observed using AFM equipped with conducting tip addressing ∼15 unit cells in high-quality BiFeO3 single crystal grown from a non-stoichiometric melt. The switching appeared under high-vacuum conditions above 340 K and the studies at various temperatures yield the activation energy of 0.74 eV. The field-induced changes in the resistivity were ascribed to the presence of localized oxygen vacancies as a consequence of the mixed valence of Fe2+/Fe3+ ions.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

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Database coverage:
Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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