TY  - JOUR
AU  - Markiewicz, Ewa
AU  - Szot, K.
AU  - Hilczer, Bożena
AU  - Pietraszko, Adam Andrzej
TI  - BiFeO $_{3}$ single crystal as resistive switching element for application in microelectronic devices
JO  - Phase transitions
VL  - 86
IS  - 2-3
SN  - 1029-0338
CY  - London [u.a.]
PB  - Taylor & Francis
M1  - FZJ-2015-04197
SP  - 284 - 289
PY  - 2013
AB  - Local resistive switching was observed using AFM equipped with conducting tip addressing ∼15 unit cells in high-quality BiFeO3 single crystal grown from a non-stoichiometric melt. The switching appeared under high-vacuum conditions above 340 K and the studies at various temperatures yield the activation energy of 0.74 eV. The field-induced changes in the resistivity were ascribed to the presence of localized oxygen vacancies as a consequence of the mixed valence of Fe2+/Fe3+ ions.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000313414200022
DO  - DOI:10.1080/01411594.2012.727262
UR  - https://juser.fz-juelich.de/record/201907
ER  -