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@ARTICLE{Markiewicz:201907,
      author       = {Markiewicz, Ewa and Szot, K. and Hilczer, Bożena and
                      Pietraszko, Adam Andrzej},
      title        = {{B}i{F}e{O} $_{3}$ single crystal as resistive switching
                      element for application in microelectronic devices},
      journal      = {Phase transitions},
      volume       = {86},
      number       = {2-3},
      issn         = {1029-0338},
      address      = {London [u.a.]},
      publisher    = {Taylor $\&$ Francis},
      reportid     = {FZJ-2015-04197},
      pages        = {284 - 289},
      year         = {2013},
      abstract     = {Local resistive switching was observed using AFM equipped
                      with conducting tip addressing ∼15 unit cells in
                      high-quality BiFeO3 single crystal grown from a
                      non-stoichiometric melt. The switching appeared under
                      high-vacuum conditions above 340 K and the studies at
                      various temperatures yield the activation energy of
                      0.74 eV. The field-induced changes in the resistivity were
                      ascribed to the presence of localized oxygen vacancies as a
                      consequence of the mixed valence of Fe2+/Fe3+ ions.},
      cin          = {PGI-7},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {421 - Frontiers of charge based Electronics (POF2-421)},
      pid          = {G:(DE-HGF)POF2-421},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000313414200022},
      doi          = {10.1080/01411594.2012.727262},
      url          = {https://juser.fz-juelich.de/record/201907},
}