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| Home > Publications database > BiFeO $_{3}$ single crystal as resistive switching element for application in microelectronic devices > print |
| 001 | 201907 | ||
| 005 | 20210129215942.0 | ||
| 024 | 7 | _ | |a 10.1080/01411594.2012.727262 |2 doi |
| 024 | 7 | _ | |a 0141-1594 |2 ISSN |
| 024 | 7 | _ | |a 1029-0338 |2 ISSN |
| 024 | 7 | _ | |a WOS:000313414200022 |2 WOS |
| 037 | _ | _ | |a FZJ-2015-04197 |
| 082 | _ | _ | |a 540 |
| 100 | 1 | _ | |a Markiewicz, Ewa |0 P:(DE-HGF)0 |b 0 |e Corresponding Author |
| 245 | _ | _ | |a BiFeO $_{3}$ single crystal as resistive switching element for application in microelectronic devices |
| 260 | _ | _ | |a London [u.a.] |c 2013 |b Taylor & Francis |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1435648949_4626 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 520 | _ | _ | |a Local resistive switching was observed using AFM equipped with conducting tip addressing ∼15 unit cells in high-quality BiFeO3 single crystal grown from a non-stoichiometric melt. The switching appeared under high-vacuum conditions above 340 K and the studies at various temperatures yield the activation energy of 0.74 eV. The field-induced changes in the resistivity were ascribed to the presence of localized oxygen vacancies as a consequence of the mixed valence of Fe2+/Fe3+ ions. |
| 536 | _ | _ | |a 421 - Frontiers of charge based Electronics (POF2-421) |0 G:(DE-HGF)POF2-421 |c POF2-421 |f POF II |x 0 |
| 588 | _ | _ | |a Dataset connected to CrossRef, juser.fz-juelich.de |
| 700 | 1 | _ | |a Szot, K. |0 P:(DE-Juel1)130993 |b 1 |u fzj |
| 700 | 1 | _ | |a Hilczer, Bożena |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Pietraszko, Adam Andrzej |0 P:(DE-HGF)0 |b 3 |
| 773 | _ | _ | |a 10.1080/01411594.2012.727262 |g Vol. 86, no. 2-3, p. 284 - 289 |0 PERI:(DE-600)2022931-8 |n 2-3 |p 284 - 289 |t Phase transitions |v 86 |y 2013 |x 1029-0338 |
| 909 | C | O | |o oai:juser.fz-juelich.de:201907 |p VDB |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-HGF)0 |
| 913 | 2 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |
| 913 | 1 | _ | |a DE-HGF |b Schlüsseltechnologien |1 G:(DE-HGF)POF2-420 |0 G:(DE-HGF)POF2-421 |2 G:(DE-HGF)POF2-400 |v Frontiers of charge based Electronics |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF2 |l Grundlagen zukünftiger Informationstechnologien |
| 915 | _ | _ | |a JCR |0 StatID:(DE-HGF)0100 |2 StatID |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0110 |2 StatID |b Science Citation Index |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0111 |2 StatID |b Science Citation Index Expanded |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0150 |2 StatID |b Web of Science Core Collection |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0199 |2 StatID |b Thomson Reuters Master Journal List |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0200 |2 StatID |b SCOPUS |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1150 |2 StatID |b Current Contents - Physical, Chemical and Earth Sciences |
| 915 | _ | _ | |a IF < 5 |0 StatID:(DE-HGF)9900 |2 StatID |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-7-20110106 |k PGI-7 |l Elektronische Materialien |x 0 |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 980 | _ | _ | |a UNRESTRICTED |
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