TY  - JOUR
AU  - Schnedler, M.
AU  - Portz, V.
AU  - Eisele, H.
AU  - Ebert, Ph.
AU  - Dunin-Borkowski, Rafal
TI  - Polarity-dependent pinning of a surface state
JO  - Physical review / B
VL  - 91
IS  - 20
SN  - 1098-0121
CY  - College Park, Md.
PB  - APS
M1  - FZJ-2015-04414
SP  - 205309
PY  - 2015
AB  - We illustrate a polarity-dependent Fermi level pinning at semiconductor surfaces with chargeable surface states within the fundamental band gap. Scanning tunneling spectroscopy of the GaN(101¯0) surface shows that the intrinsic surface state within the band gap pins the Fermi energy only at positive voltages, but not at negative ones. This polarity dependence is attributed to arise from limited electron transfer from the conduction band to the surface state due to quantum mechanically prohibited direct transitions. Thus, a chargeable intrinsic surface state in the band gap may not pin the Fermi level or only at one polarity, depending on the band to surface state transition rates.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000354972700010
DO  - DOI:10.1103/PhysRevB.91.205309
UR  - https://juser.fz-juelich.de/record/202125
ER  -