Journal Article

FZJ-2015-04414

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Polarity-dependent pinning of a surface state

Schnedler, M. ; Portz, V.FZJ* ; Eisele, H. ; Ebert, P. (Corresponding Author)FZJ* ; Dunin-Borkowski, R.FZJ*

2015
APS College Park, Md.

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Please use a persistent id in citations: http://hdl.handle.net/2128/8886  doi:10.1103/PhysRevB.91.205309

Abstract: We illustrate a polarity-dependent Fermi level pinning at semiconductor surfaces with chargeable surface states within the fundamental band gap. Scanning tunneling spectroscopy of the GaN(101¯0) surface shows that the intrinsic surface state within the band gap pins the Fermi energy only at positive voltages, but not at negative ones. This polarity dependence is attributed to arise from limited electron transfer from the conduction band to the surface state due to quantum mechanically prohibited direct transitions. Thus, a chargeable intrinsic surface state in the band gap may not pin the Fermi level or only at one polarity, depending on the band to surface state transition rates.

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Contributing Institute(s):

1. Mikrostrukturforschung (PGI-5)

Research Program(s):

1. 141 - Controlling Electron Charge-Based Phenomena (POF3-141) (POF3-141)

Appears in the scientific report 2015

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Database coverage:
; ; ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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