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@ARTICLE{Schnedler:202125,
      author       = {Schnedler, M. and Portz, V. and Eisele, H. and Ebert, Ph.
                      and Dunin-Borkowski, Rafal},
      title        = {{P}olarity-dependent pinning of a surface state},
      journal      = {Physical review / B},
      volume       = {91},
      number       = {20},
      issn         = {1098-0121},
      address      = {College Park, Md.},
      publisher    = {APS},
      reportid     = {FZJ-2015-04414},
      pages        = {205309},
      year         = {2015},
      abstract     = {We illustrate a polarity-dependent Fermi level pinning at
                      semiconductor surfaces with chargeable surface states within
                      the fundamental band gap. Scanning tunneling spectroscopy of
                      the GaN(101¯0) surface shows that the intrinsic surface
                      state within the band gap pins the Fermi energy only at
                      positive voltages, but not at negative ones. This polarity
                      dependence is attributed to arise from limited electron
                      transfer from the conduction band to the surface state due
                      to quantum mechanically prohibited direct transitions. Thus,
                      a chargeable intrinsic surface state in the band gap may not
                      pin the Fermi level or only at one polarity, depending on
                      the band to surface state transition rates.},
      cin          = {PGI-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-5-20110106},
      pnm          = {141 - Controlling Electron Charge-Based Phenomena
                      (POF3-141)},
      pid          = {G:(DE-HGF)POF3-141},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000354972700010},
      doi          = {10.1103/PhysRevB.91.205309},
      url          = {https://juser.fz-juelich.de/record/202125},
}