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@INPROCEEDINGS{Richter:202709,
      author       = {Richter, Alexei and Zhao, Lei and Finger, Friedhelm and
                      Ding, Kaining},
      title        = {{M}icrostructure {M}odel for {H}ydrogenated
                      {N}anocrystalline {S}ilicon {O}xide {T}hin-{F}ilms in
                      {S}ilicon {H}eterojunction {S}olar {C}ells},
      reportid     = {FZJ-2015-04892},
      year         = {2015},
      abstract     = {A straightforward approach to increase the solar energy
                      conversion efficiency in solar cells is to reduce their
                      optical loss while maintaining the electrical performance.
                      For example, nanocrystalline hydrogenated silicon oxide (nc
                      SiOX:H) can be implemented in silicon based solar cells as a
                      wide optical band gap material to diminish parasitic optical
                      losses. At the same time, an excellent electrical
                      conductivity can be achieved due to its unique
                      microstructure. In the present work, we introduce a
                      microstructure model that consistently correlates the nc
                      SiOX:H microstructure, consisting of four different phases,
                      to the deposition conditions during Plasma Enhanced Chemical
                      Vapour Deposition (PECVD) as well as to the optoelectronic
                      properties of nc SiOX:H thin films. We successfully
                      validated the model by means of a large quantity of
                      systematically and individually optimized n- and p-doped nc
                      SiOX:H films deposited at very high frequency (VHF) and
                      radio frequency (RF). In particular, this model shows that
                      the improved optoelectronic performance of nc SiOX:H films
                      deposited at VHF as compared to RF might be a consequence of
                      an improved phase separation between the conductive
                      nanocrystalline silicon and the oxygen rich matrix at VHF,
                      which in turn is likely due to a higher hydrogen etching
                      effect as compared to RF. In addition, we present our newest
                      results on silicon heterojunction solar cells using our
                      newly developed VHF nc SiOX:H with superior optoelectronic
                      properties.},
      month         = {Jun},
      date          = {2015-06-15},
      organization  = {42nd IEEE Photovoltaic Specialists
                       Conference, New Orleans (USA), 15 Jun
                       2015 - 19 Jun 2015},
      subtyp        = {Other},
      cin          = {IEK-5},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121) / HITEC
                      - Helmholtz Interdisciplinary Doctoral Training in Energy
                      and Climate Research (HITEC) (HITEC-20170406)},
      pid          = {G:(DE-HGF)POF3-121 / G:(DE-Juel1)HITEC-20170406},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/202709},
}