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| Home > Publications database > Microstructure Model for Hydrogenated Nanocrystalline Silicon Oxide Thin-Films in Silicon Heterojunction Solar Cells |
| Home > Publications database > Microstructure Model for Hydrogenated Nanocrystalline Silicon Oxide Thin-Films in Silicon Heterojunction Solar Cells |
| Conference Presentation (Other) | FZJ-2015-04892 |
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2015
Abstract: A straightforward approach to increase the solar energy conversion efficiency in solar cells is to reduce their optical loss while maintaining the electrical performance. For example, nanocrystalline hydrogenated silicon oxide (nc SiOX:H) can be implemented in silicon based solar cells as a wide optical band gap material to diminish parasitic optical losses. At the same time, an excellent electrical conductivity can be achieved due to its unique microstructure. In the present work, we introduce a microstructure model that consistently correlates the nc SiOX:H microstructure, consisting of four different phases, to the deposition conditions during Plasma Enhanced Chemical Vapour Deposition (PECVD) as well as to the optoelectronic properties of nc SiOX:H thin films. We successfully validated the model by means of a large quantity of systematically and individually optimized n- and p-doped nc SiOX:H films deposited at very high frequency (VHF) and radio frequency (RF). In particular, this model shows that the improved optoelectronic performance of nc SiOX:H films deposited at VHF as compared to RF might be a consequence of an improved phase separation between the conductive nanocrystalline silicon and the oxygen rich matrix at VHF, which in turn is likely due to a higher hydrogen etching effect as compared to RF. In addition, we present our newest results on silicon heterojunction solar cells using our newly developed VHF nc SiOX:H with superior optoelectronic properties.
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