Home > Publications database > Microstructure Model for Hydrogenated Nanocrystalline Silicon Oxide Thin-Films in Silicon Heterojunction Solar Cells > print

001     202709
005     20240708133729.0
037 _ _ |a FZJ-2015-04892
041 _ _ |a English
100 1 _ |a Richter, Alexei
|0 P:(DE-Juel1)162140
|b 0
|e Corresponding author
|u fzj
111 2 _ |a 42nd IEEE Photovoltaic Specialists Conference
|g 42nd IEEE PVSC 2015
|c New Orleans
|d 2015-06-15 - 2015-06-19
|w USA
245 _ _ |a Microstructure Model for Hydrogenated Nanocrystalline Silicon Oxide Thin-Films in Silicon Heterojunction Solar Cells
260 _ _ |c 2015
336 7 _ |a Conference Presentation
|b conf
|m conf
|0 PUB:(DE-HGF)6
|s 1436872545_20864
|2 PUB:(DE-HGF)
|x Other
336 7 _ |a Conference Paper
|0 33
|2 EndNote
336 7 _ |a Other
|2 DataCite
336 7 _ |a LECTURE_SPEECH
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336 7 _ |a conferenceObject
|2 DRIVER
336 7 _ |a INPROCEEDINGS
|2 BibTeX
520 _ _ |a A straightforward approach to increase the solar energy conversion efficiency in solar cells is to reduce their optical loss while maintaining the electrical performance. For example, nanocrystalline hydrogenated silicon oxide (nc SiOX:H) can be implemented in silicon based solar cells as a wide optical band gap material to diminish parasitic optical losses. At the same time, an excellent electrical conductivity can be achieved due to its unique microstructure. In the present work, we introduce a microstructure model that consistently correlates the nc SiOX:H microstructure, consisting of four different phases, to the deposition conditions during Plasma Enhanced Chemical Vapour Deposition (PECVD) as well as to the optoelectronic properties of nc SiOX:H thin films. We successfully validated the model by means of a large quantity of systematically and individually optimized n- and p-doped nc SiOX:H films deposited at very high frequency (VHF) and radio frequency (RF). In particular, this model shows that the improved optoelectronic performance of nc SiOX:H films deposited at VHF as compared to RF might be a consequence of an improved phase separation between the conductive nanocrystalline silicon and the oxygen rich matrix at VHF, which in turn is likely due to a higher hydrogen etching effect as compared to RF. In addition, we present our newest results on silicon heterojunction solar cells using our newly developed VHF nc SiOX:H with superior optoelectronic properties.
536 _ _ |a 121 - Solar cells of the next generation (POF3-121)
|0 G:(DE-HGF)POF3-121
|c POF3-121
|f POF III
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536 _ _ |0 G:(DE-Juel1)HITEC-20170406
|x 1
|c HITEC-20170406
|a HITEC - Helmholtz Interdisciplinary Doctoral Training in Energy and Climate Research (HITEC) (HITEC-20170406)
700 1 _ |a Zhao, Lei
|0 P:(DE-Juel1)159406
|b 1
700 1 _ |a Finger, Friedhelm
|0 P:(DE-Juel1)130238
|b 2
|u fzj
700 1 _ |a Ding, Kaining
|0 P:(DE-Juel1)130233
|b 3
|u fzj
909 C O |o oai:juser.fz-juelich.de:202709
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910 1 _ |a Forschungszentrum Jülich GmbH
|0 I:(DE-588b)5008462-8
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910 1 _ |a Forschungszentrum Jülich GmbH
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910 1 _ |a Forschungszentrum Jülich GmbH
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913 1 _ |a DE-HGF
|l Erneuerbare Energien
|1 G:(DE-HGF)POF3-120
|0 G:(DE-HGF)POF3-121
|2 G:(DE-HGF)POF3-100
|v Solar cells of the next generation
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF3
|b Energie
914 1 _ |y 2015
920 _ _ |l yes
920 1 _ |0 I:(DE-Juel1)IEK-5-20101013
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|l Photovoltaik
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980 _ _ |a conf
980 _ _ |a VDB
980 _ _ |a I:(DE-Juel1)IEK-5-20101013
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)IMD-3-20101013

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