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@ARTICLE{Mairoser:202798,
      author       = {Mairoser, Thomas and Mundy, Julia A. and Melville,
                      Alexander and Hodash, Daniel and Cueva, Paul and Held,
                      Rainer and Glavic, Artur and Schubert, Jürgen and Muller,
                      David A. and Schlom, Darrell G. and Schmehl, Andreas},
      title        = {{H}igh-quality {E}u{O} thin films the easy way via
                      topotactic transformation},
      journal      = {Nature Communications},
      volume       = {6},
      issn         = {2041-1723},
      address      = {London},
      publisher    = {Nature Publishing Group},
      reportid     = {FZJ-2015-04967},
      pages        = {7716 -},
      year         = {2015},
      abstract     = {Epitaxy is widely employed to create highly oriented
                      crystalline films. A less appreciated, butnonetheless
                      powerful means of creating such films is via topotactic
                      transformation, in which achemical reaction transforms a
                      single crystal of one phase into a single crystal of a
                      differentphase, which inherits its orientation from the
                      original crystal. Topotactic reactions may beapplied to
                      epitactic films to substitute, add or remove ions to yield
                      epitactic films of differentphases. Here we exploit a
                      topotactic reduction reaction to provide a non-ultra-high
                      vacuum(UHV) means of growing highly oriented single
                      crystalline thin films of the easily
                      overoxidizedhalf-metallic semiconductor europium monoxide
                      (EuO) with a perfection rivallingthat of the best films of
                      the same material grown by molecular-beam epitaxy or UHV
                      pulsedlaserdeposition. As the technique only requires
                      high-vacuum deposition equipment, it hasthe potential to
                      drastically improve the accessibility of high-quality single
                      crystalline films ofEuO as well as other
                      difficult-to-synthesize compounds.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {500},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000358858500022},
      pubmed       = {pmid:26177710},
      doi          = {10.1038/ncomms8716},
      url          = {https://juser.fz-juelich.de/record/202798},
}