Journal Article

FZJ-2015-04967

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png High-quality EuO thin films the easy way via topotactic transformation

Mairoser, T. ; Mundy, J. A. ; Melville, A. ; Hodash, D. ; Cueva, P. ; Held, R. ; Glavic, A. ; Schubert, J.FZJ* ; Muller, D. A. ; Schlom, D. G. (Corresponding author) ; Schmehl, A.

2015
Nature Publishing Group London

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Please use a persistent id in citations: http://hdl.handle.net/2128/8986  doi:10.1038/ncomms8716

Abstract: Epitaxy is widely employed to create highly oriented crystalline films. A less appreciated, butnonetheless powerful means of creating such films is via topotactic transformation, in which achemical reaction transforms a single crystal of one phase into a single crystal of a differentphase, which inherits its orientation from the original crystal. Topotactic reactions may beapplied to epitactic films to substitute, add or remove ions to yield epitactic films of differentphases. Here we exploit a topotactic reduction reaction to provide a non-ultra-high vacuum(UHV) means of growing highly oriented single crystalline thin films of the easily overoxidizedhalf-metallic semiconductor europium monoxide (EuO) with a perfection rivallingthat of the best films of the same material grown by molecular-beam epitaxy or UHV pulsedlaserdeposition. As the technique only requires high-vacuum deposition equipment, it hasthe potential to drastically improve the accessibility of high-quality single crystalline films ofEuO as well as other difficult-to-synthesize compounds.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2015

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Database coverage:
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