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@ARTICLE{vondenDriesch:202937,
      author       = {von den Driesch, N. and Stange, D. and Wirths, S. and
                      Mussler, G. and Holländer, B. and Ikonic, Z. and Hartmann,
                      J. M. and Stoica, T. and Mantl, S. and Grützmacher, D. and
                      Buca, D.},
      title        = {{D}irect {B}andgap {G}roup {IV} {E}pitaxy on {S}i for
                      {L}aser {A}pplications},
      journal      = {Chemistry of materials},
      volume       = {27},
      number       = {13},
      issn         = {1520-5002},
      address      = {Washington, DC},
      publisher    = {American Chemical Society},
      reportid     = {FZJ-2015-05063},
      pages        = {4693 - 4702},
      year         = {2015},
      abstract     = {The recent observation of a fundamental direct bandgap for
                      GeSn group IV alloys and the demonstration of low
                      temperature lasing provide new perspectives on the
                      fabrication of Si photonic circuits. This work addresses the
                      progress in GeSn alloy epitaxy aiming at room temperature
                      GeSn lasing. Chemical vapor deposition of direct bandgap
                      GeSn alloys with a high Γ- to L-valley energy separation
                      and large thicknesses for efficient optical mode confinement
                      is presented and discussed. Up to 1 μm thick GeSn layers
                      with Sn contents up to 14 at. $\%$ were grown on thick
                      relaxed Ge buffers, using Ge2H6 and SnCl4 precursors. Strong
                      strain relaxation (up to $81\%)$ at 12.5 at. $\%$ Sn
                      concentration, translating into an increased separation
                      between Γ- and L-valleys of about 60 meV, have been
                      obtained without crystalline structure degradation, as
                      revealed by Rutherford backscattering spectroscopy/ion
                      channeling and transmission electron microscopy. Room
                      temperature reflectance and photoluminescence measurements
                      were performed to probe the optical properties of these
                      alloys. The emission/absorption limit of GeSn alloys can be
                      extended up to 3.5 μm (0.35 eV), making those alloys ideal
                      candidates for optoelectronics in the mid-infrared region.
                      Theoretical net gain calculations indicate that large room
                      temperature laser gains should be reachable even without
                      additional doping.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000358104700023},
      doi          = {10.1021/acs.chemmater.5b01327},
      url          = {https://juser.fz-juelich.de/record/202937},
}