Journal Article

FZJ-2015-05063

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Direct Bandgap Group IV Epitaxy on Si for Laser Applications

von den Driesch, N. (Corresponding author)FZJ* ; Stange, D.FZJ* ; Wirths, S.FZJ* ; Mussler, G.FZJ* ; Holländer, B.FZJ* ; Ikonic, Z. ; Hartmann, J. M. ; Stoica, T.FZJ* ; Mantl, S.FZJ* ; Grützmacher, D.FZJ* ; Buca, D. (Corresponding author)FZJ*

2015
American Chemical Society Washington, DC

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Please use a persistent id in citations: doi:10.1021/acs.chemmater.5b01327

Abstract: The recent observation of a fundamental direct bandgap for GeSn group IV alloys and the demonstration of low temperature lasing provide new perspectives on the fabrication of Si photonic circuits. This work addresses the progress in GeSn alloy epitaxy aiming at room temperature GeSn lasing. Chemical vapor deposition of direct bandgap GeSn alloys with a high Γ- to L-valley energy separation and large thicknesses for efficient optical mode confinement is presented and discussed. Up to 1 μm thick GeSn layers with Sn contents up to 14 at. % were grown on thick relaxed Ge buffers, using Ge2H6 and SnCl4 precursors. Strong strain relaxation (up to 81%) at 12.5 at. % Sn concentration, translating into an increased separation between Γ- and L-valleys of about 60 meV, have been obtained without crystalline structure degradation, as revealed by Rutherford backscattering spectroscopy/ion channeling and transmission electron microscopy. Room temperature reflectance and photoluminescence measurements were performed to probe the optical properties of these alloys. The emission/absorption limit of GeSn alloys can be extended up to 3.5 μm (0.35 eV), making those alloys ideal candidates for optoelectronics in the mid-infrared region. Theoretical net gain calculations indicate that large room temperature laser gains should be reachable even without additional doping.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2015

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; IF >= 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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