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@ARTICLE{Brooks:203125,
author = {Brooks, Charles M. and Wilson, Richard B. and Schäfer,
Anna and Mundy, Julia A. and Holtz, Megan E. and Muller,
David A. and Schubert, Jürgen and Cahill, David G. and
Schlom, Darrell G.},
title = {{T}uning thermal conductivity in homoepitaxial
{S}r{T}i{O}$_{3}$ films via defects},
journal = {Applied physics letters},
volume = {107},
number = {5},
issn = {1077-3118},
address = {Melville, NY},
publisher = {American Inst. of Physics},
reportid = {FZJ-2015-05140},
pages = {051902 -},
year = {2015},
abstract = {We demonstrate the ability to tune the thermal conductivity
of homoepitaxial SrTiO3 films depositedby reactive
molecular-beam epitaxy by varying growth temperature,
oxidation environment, and cationstoichiometry. Both point
defects and planar defects decrease the longitudinal thermal
conductivity(k33), with the greatest decrease in films of
the same composition observed for films containingplanar
defects oriented perpendicular to the direction of heat
flow. The longitudinal thermal conductivitycan be modified
by as much as $80\%—from$ 11.5W m1K1 for stoichiometric
homoepitaxialSrTiO3 to 2W m1K1 for strontium-rich
homoepitaxial Sr1þdTiOx films—by incorporating
(SrO)2Ruddlesden-Popper planar defects.VC 2015 AIP
Publishing LLC.},
cin = {PGI-9 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000359375700014},
doi = {10.1063/1.4927200},
url = {https://juser.fz-juelich.de/record/203125},
}