Journal Article

FZJ-2015-05140

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Tuning thermal conductivity in homoepitaxial SrTiO$_{3}$ films via defects

Brooks, C. M. (Corresponding author) ; Wilson, R. B. ; Schäfer, A. ; Mundy, J. A. ; Holtz, M. E. ; Muller, D. A. ; Schubert, J.FZJ* ; Cahill, D. G. ; Schlom, D. G. (Corresponding author)

2015
American Inst. of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/17318  doi:10.1063/1.4927200

Abstract: We demonstrate the ability to tune the thermal conductivity of homoepitaxial SrTiO3 films depositedby reactive molecular-beam epitaxy by varying growth temperature, oxidation environment, and cationstoichiometry. Both point defects and planar defects decrease the longitudinal thermal conductivity(k33), with the greatest decrease in films of the same composition observed for films containingplanar defects oriented perpendicular to the direction of heat flow. The longitudinal thermal conductivitycan be modified by as much as 80%—from 11.5W m1K1 for stoichiometric homoepitaxialSrTiO3 to 2W m1K1 for strontium-rich homoepitaxial Sr1þdTiOx films—by incorporating (SrO)2Ruddlesden-Popper planar defects.VC 2015 AIP Publishing LLC.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2015

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Database coverage:
; ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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