%0 Journal Article
%A Pham, Anh-Tuan
%A Zhao, Qing-Tai
%A Jungemann, Christoph
%A Meinerzhagen, Bernd
%A Mantl, Siegfried
%A Soree, Bart
%A Pourtois, Geoffrey
%T Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C–V characteristics, mobility, and ON currentgi-9
%J Solid state electronics
%V 65-66
%@ 0038-1101
%C Oxford [u.a.]
%I Pergamon, Elsevier Science
%M FZJ-2015-05145
%P 64 - 71
%D 2011
%X Strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs are investigated including important aspects like C–V characteristics, mobility, and ON current. The simulations are based on the self-consistent solution of 6 × 6 k · p Schrödinger Equation, multi subband Boltzmann Transport Equation and Poisson Equation, and capture size quantization, strain, crystallographic orientation, and SiGe alloy effects on a solid physical basis. The simulation results are validated by comparison with different experimental data sources. The simulation results show that the strained SiGe HOI PMOSFET with (1 1 0) surface orientation has a higher gate capacitance and a much higher mobility and ON current compared to a similar device with the traditional (0 0 1) surface orientation.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000297182700012
%R 10.1016/j.sse.2011.06.021
%U https://juser.fz-juelich.de/record/203130