Journal Article

FZJ-2015-05145

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C–V characteristics, mobility, and ON currentgi-9

Pham, A.-T. (Corresponding author) ; Zhao, Q.-T.FZJ* ; Jungemann, C. ; Meinerzhagen, B. ; Mantl, S.FZJ* ; Soree, B. ; Pourtois, G.

2011
Pergamon, Elsevier Science Oxford [u.a.]

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Please use a persistent id in citations: doi:10.1016/j.sse.2011.06.021

Abstract: Strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs are investigated including important aspects like C–V characteristics, mobility, and ON current. The simulations are based on the self-consistent solution of 6 × 6 k · p Schrödinger Equation, multi subband Boltzmann Transport Equation and Poisson Equation, and capture size quantization, strain, crystallographic orientation, and SiGe alloy effects on a solid physical basis. The simulation results are validated by comparison with different experimental data sources. The simulation results show that the strained SiGe HOI PMOSFET with (1 1 0) surface orientation has a higher gate capacitance and a much higher mobility and ON current compared to a similar device with the traditional (0 0 1) surface orientation.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 899 - ohne Topic (POF3-899) (POF3-899)

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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