TY  - JOUR
AU  - Pham, Anh-Tuan
AU  - Zhao, Qing-Tai
AU  - Jungemann, Christoph
AU  - Meinerzhagen, Bernd
AU  - Mantl, Siegfried
AU  - Soree, Bart
AU  - Pourtois, Geoffrey
TI  - Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C–V characteristics, mobility, and ON currentgi-9
JO  - Solid state electronics
VL  - 65-66
SN  - 0038-1101
CY  - Oxford [u.a.]
PB  - Pergamon, Elsevier Science
M1  - FZJ-2015-05145
SP  - 64 - 71
PY  - 2011
AB  - Strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs are investigated including important aspects like C–V characteristics, mobility, and ON current. The simulations are based on the self-consistent solution of 6 × 6 k · p Schrödinger Equation, multi subband Boltzmann Transport Equation and Poisson Equation, and capture size quantization, strain, crystallographic orientation, and SiGe alloy effects on a solid physical basis. The simulation results are validated by comparison with different experimental data sources. The simulation results show that the strained SiGe HOI PMOSFET with (1 1 0) surface orientation has a higher gate capacitance and a much higher mobility and ON current compared to a similar device with the traditional (0 0 1) surface orientation.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000297182700012
DO  - DOI:10.1016/j.sse.2011.06.021
UR  - https://juser.fz-juelich.de/record/203130
ER  -