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| Home > Publications database > Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C–V characteristics, mobility, and ON currentgi-9 > print |
| Home > Publications database > Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C–V characteristics, mobility, and ON currentgi-9 > print |
| 001 | 203130 | ||
| 005 | 20210129220304.0 | ||
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| 100 | 1 | _ | |a Pham, Anh-Tuan |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Comparison of strained SiGe heterostructure-on-insulator (001) and (110) PMOSFETs: C–V characteristics, mobility, and ON currentgi-9 |
| 260 | _ | _ | |a Oxford [u.a.] |c 2011 |b Pergamon, Elsevier Science |
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| 520 | _ | _ | |a Strained SiGe heterostructure-on-insulator (0 0 1) and (1 1 0) PMOSFETs are investigated including important aspects like C–V characteristics, mobility, and ON current. The simulations are based on the self-consistent solution of 6 × 6 k · p Schrödinger Equation, multi subband Boltzmann Transport Equation and Poisson Equation, and capture size quantization, strain, crystallographic orientation, and SiGe alloy effects on a solid physical basis. The simulation results are validated by comparison with different experimental data sources. The simulation results show that the strained SiGe HOI PMOSFET with (1 1 0) surface orientation has a higher gate capacitance and a much higher mobility and ON current compared to a similar device with the traditional (0 0 1) surface orientation. |
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