Contribution to a conference proceedings

FZJ-2015-05151

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Cathodoluminescence spectroscopy on selectively grown GaN nanowires

Schumann, T. (Corresponding author)FZJ* ; Gotschke, T.FZJ* ; Limbach, F.FZJ* ; Stoica, T.FZJ* ; Calarco, R.FZJ*

2011

ISBN: 978-0-81948-476-5

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Please use a persistent id in citations: doi:10.1117/12.878836

Abstract: GaN nanowires (NWs) were grown selectively on Si(111) substrate without catalyst by plasma-assisted molecular-beam epitaxy under N-rich conditions. The selective growth was obtained using regular arrays of holes patterned in a silicon oxide layer on top of a thin AlN buffer. The optical properties of the selectively grown GaN NWs have been studied using cathodoluminescence (CL) spectroscopy. Both, CL spectra measured on NW ensembles and spatially resolved monochromatic images were investigated. From a comparison of morphology and CL studies it emerges that NW coalescence is responsible for the appearance of the defect related emission.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 899 - ohne Topic (POF3-899) (POF3-899)

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