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000203138 037__ $$aFZJ-2015-05151
000203138 041__ $$aEnglish
000203138 1001_ $$0P:(DE-HGF)0$$aSchumann, T.$$b0$$eCorresponding author
000203138 1112_ $$aSPIE OPTO$$cSan Francisco$$d2011-01-22 - 2011-01-27$$wCalifornia
000203138 245__ $$aCathodoluminescence spectroscopy on selectively grown GaN nanowires
000203138 260__ $$c2011
000203138 29510 $$a: [Proceedings] - , 2011. - ISBN  - doi:10.1117/12.878836
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000203138 520__ $$aGaN nanowires (NWs) were grown selectively on Si(111) substrate without catalyst by plasma-assisted molecular-beam epitaxy under N-rich conditions. The selective growth was obtained using regular arrays of holes patterned in a silicon oxide layer on top of a thin AlN buffer. The optical properties of the selectively grown GaN NWs have been studied using cathodoluminescence (CL) spectroscopy. Both, CL spectra measured on NW ensembles and spatially resolved monochromatic images were investigated. From a comparison of morphology and CL studies it emerges that NW coalescence is responsible for the appearance of the defect related emission.
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000203138 7001_ $$0P:(DE-HGF)0$$aGotschke, T.$$b1
000203138 7001_ $$0P:(DE-HGF)0$$aLimbach, F.$$b2
000203138 7001_ $$0P:(DE-Juel1)128637$$aStoica, T.$$b3$$ufzj
000203138 7001_ $$0P:(DE-HGF)0$$aCalarco, R.$$b4
000203138 773__ $$a10.1117/12.878836
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