Contribution to a conference proceedings

FZJ-2015-05158

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Spin injection and spin-orbit coupling in low-dimensional semiconductor nanostructures

Heedt, S.FZJ* ; Wehrmann, I.FZJ* ; Gerster, T.FZJ* ; Wenk, P. ; Kettemann, S. ; Sladek, K.FZJ* ; Hardtdegen, H.FZJ* ; Bringer, A.FZJ* ; Schubert, J.FZJ* ; Demarina, N.FZJ* ; Grützmacher, D.FZJ* ; Schäpers, T.FZJ*

2014

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Please use a persistent id in citations: doi:10.1117/12.2064867

Abstract: Due to their strong spin-orbit coupling III-V semiconductor nanowires are excellent candidates for electrical spin manipulation. Therefore, a major goal is to tailor spin-orbit coupling in these devices. Direct electrical spin injection into quasi one-dimensional nanowires is demonstrated. Furthermore, the weak antilocalization effect was investigated in InAs nanowires. The quantum corrections to the conductivity are interpreted by developing a quasi-one-dimensional diffusive model. It turns out that by means of doping and electric gating the spin-lifetimes can be tuned significantly. By creating few-electron quantum dots inside these devices the impact of the confinement on the spin relaxation properties is investigated. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 899 - ohne Topic (POF3-899) (POF3-899)

Appears in the scientific report 2015

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