Home > Publications database > Spin injection and spin-orbit coupling in low-dimensional semiconductor nanostructures > print |
001 | 203149 | ||
005 | 20210129220308.0 | ||
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100 | 1 | _ | |a Heedt, Sebastian |0 P:(DE-Juel1)140272 |b 0 |u fzj |
111 | 2 | _ | |a SPIE NanoScience + Engineering |c San Diego |d 2014-08-09 - 2014-08-13 |w California |
245 | _ | _ | |a Spin injection and spin-orbit coupling in low-dimensional semiconductor nanostructures |
260 | _ | _ | |c 2014 |
300 | _ | _ | |a |
336 | 7 | _ | |a Contribution to a conference proceedings |b contrib |m contrib |0 PUB:(DE-HGF)8 |s 1438938587_22785 |2 PUB:(DE-HGF) |
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520 | _ | _ | |a Due to their strong spin-orbit coupling III-V semiconductor nanowires are excellent candidates for electrical spin manipulation. Therefore, a major goal is to tailor spin-orbit coupling in these devices. Direct electrical spin injection into quasi one-dimensional nanowires is demonstrated. Furthermore, the weak antilocalization effect was investigated in InAs nanowires. The quantum corrections to the conductivity are interpreted by developing a quasi-one-dimensional diffusive model. It turns out that by means of doping and electric gating the spin-lifetimes can be tuned significantly. By creating few-electron quantum dots inside these devices the impact of the confinement on the spin relaxation properties is investigated. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only. |
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700 | 1 | _ | |a Wehrmann, Isabel |0 P:(DE-HGF)0 |b 1 |
700 | 1 | _ | |a Gerster, Thomas |0 P:(DE-HGF)0 |b 2 |
700 | 1 | _ | |a Wenk, Paul |0 P:(DE-HGF)0 |b 3 |
700 | 1 | _ | |a Kettemann, Stefan |0 P:(DE-HGF)0 |b 4 |
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