Journal Article

FZJ-2015-05208

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Experimental Investigation on Alloy Scattering in sSi/ ${\rm Si}_{0.5}{\rm Ge}_{0.5}$/sSOI Quantum-Well p-MOSFET

Yu, W. (Corresponding author) ; Wu, W. ; Zhang, B.FZJ* ; Liu, C.FZJ* ; Sun, J. ; Zhai, D. ; Yu, Y. ; Wang, X. ; Shi, Y. ; Zhao, Y. ; Zhao, Q.-T.FZJ*

2014
IEEE New York, NY

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Please use a persistent id in citations: doi:10.1109/TED.2014.2304723

Abstract: Alloy scattering in a sSi/Si0.5Ge0.5/strained Silicon on Insulator (SOI) (sSOI) quantum-well (QW) p-MOSFET is investigated by hole density modulation through applying back-gate biases. The hole mobility under negative back-gate biases is found degraded by intensified alloy scattering at low electrical field because more holes are distributed in the bulk Si0.5Ge0.5. At higher electrical field, the higher density of holes populated at the Si/ Si0.5Ge0.5 interface and less holes in the bulk Si0.5Ge0.5 result in less pronounced alloy scattering, leading to mobility enhancement under negative back-gate biases. This confirms experimentally that alloy scattering does not play a significant role in the hole mobility of sSi/ Si0.5Ge0.5/sSOI QW p-MOSFETs under normal operating mode.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Neutronenstreuung (Neutronenstreuung ; JCNS-1)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2015

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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