Journal Article

FZJ-2015-05209

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png The electronic transport of top subband and disordered sea in an InAs nanowire in the presence of a mobile gate

Zhukov, A. A. (Corresponding author) ; Volk, C.FZJ* ; Winden, A.FZJ* ; Hardtdegen, H.FZJ* ; Schäpers, T.FZJ*

2014
IOP Publ. Bristol

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Please use a persistent id in citations: doi:10.1088/0953-8984/26/16/165304

Abstract: We performed measurements at helium temperatures of the electronic transport in an InAs quantum wire (R(wire) ∼ 30 kΩ) in the presence of a charged tip of an atomic force microscope serving as a mobile gate. The period and the amplitude of the observed quasi-periodic oscillations are investigated in detail as a function of electron concentration in the linear and non-linear regime. We demonstrate the influence of the tip-to-sample distance on the ability to locally affect the top subband electrons as well as the electrons in the disordered sea. Furthermore, we introduce a new method of detection of the subband occupation in an InAs wire, which allows us to evaluate the number of electrons in the conductive band of the wire.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 899 - ohne Topic (POF3-899) (POF3-899)

Appears in the scientific report 2015

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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