%0 Journal Article
%A Liu, Linjie
%A Knoll, Lars
%A Wirths, Stephan
%A Xu, Dawei
%A Mussler, Gregor
%A Breuer, Uwe
%A Holländer, Bernhard
%A Di, Zengfeng
%A Zhang, Miao
%A Mantl, Siegfried
%A Zhao, Qing-Tai
%T Homogeneous NiSi1−xGex layer formation on strained SiGe with ultrathin Ni layers
%J Microelectronic engineering
%V 139
%@ 0167-9317
%C [S.l.] @
%I Elsevier
%M FZJ-2015-05214
%P 26 - 30
%D 2015
%X Homogeneous nickel germanosilicide layers with low sheet resistance have been achieved on highly strained SiGe layers. The layer homogeneity improves with decreasing Ni thickness. Ultrathin Ni layers of 3 nm thermally treated at 400 °C yield to homogeneous germanosilicide layers with a preferential {0 1 0} growth plane and sharp interfaces to the SiGe layer. This is assumed to be energetically driven by lower surface and interface energies due to the increased surface/volume ratio with decreasing layer thickness. The strain in the remaining SiGe layers can be conserved at lower temperatures. However, at higher temperatures, germanosilicidation enhances the strain relaxation.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000357905600005
%R 10.1016/j.mee.2015.04.083
%U https://juser.fz-juelich.de/record/203228