Journal Article

FZJ-2015-05214

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Homogeneous NiSi1−xGex layer formation on strained SiGe with ultrathin Ni layers

Liu, L. (Corresponding author)FZJ* ; Knoll, L.FZJ* ; Wirths, S.FZJ* ; Xu, D.FZJ* ; Mussler, G.FZJ* ; Breuer, U.FZJ* ; Holländer, B.FZJ* ; Di, Z. ; Zhang, M. ; Mantl, S.FZJ* ; Zhao, Q.-T. (Corresponding author)FZJ*

2015
Elsevier [S.l.] @

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Please use a persistent id in citations: doi:10.1016/j.mee.2015.04.083

Abstract: Homogeneous nickel germanosilicide layers with low sheet resistance have been achieved on highly strained SiGe layers. The layer homogeneity improves with decreasing Ni thickness. Ultrathin Ni layers of 3 nm thermally treated at 400 °C yield to homogeneous germanosilicide layers with a preferential {0 1 0} growth plane and sharp interfaces to the SiGe layer. This is assumed to be energetically driven by lower surface and interface energies due to the increased surface/volume ratio with decreasing layer thickness. The strain in the remaining SiGe layers can be conserved at lower temperatures. However, at higher temperatures, germanosilicidation enhances the strain relaxation.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. Analytik (ZEA-3)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2015

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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