TY  - JOUR
AU  - Liu, Linjie
AU  - Knoll, Lars
AU  - Wirths, Stephan
AU  - Xu, Dawei
AU  - Mussler, Gregor
AU  - Breuer, Uwe
AU  - Holländer, Bernhard
AU  - Di, Zengfeng
AU  - Zhang, Miao
AU  - Mantl, Siegfried
AU  - Zhao, Qing-Tai
TI  - Homogeneous NiSi1−xGex layer formation on strained SiGe with ultrathin Ni layers
JO  - Microelectronic engineering
VL  - 139
SN  - 0167-9317
CY  - [S.l.] @
PB  - Elsevier
M1  - FZJ-2015-05214
SP  - 26 - 30
PY  - 2015
AB  - Homogeneous nickel germanosilicide layers with low sheet resistance have been achieved on highly strained SiGe layers. The layer homogeneity improves with decreasing Ni thickness. Ultrathin Ni layers of 3 nm thermally treated at 400 °C yield to homogeneous germanosilicide layers with a preferential {0 1 0} growth plane and sharp interfaces to the SiGe layer. This is assumed to be energetically driven by lower surface and interface energies due to the increased surface/volume ratio with decreasing layer thickness. The strain in the remaining SiGe layers can be conserved at lower temperatures. However, at higher temperatures, germanosilicidation enhances the strain relaxation.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000357905600005
DO  - DOI:10.1016/j.mee.2015.04.083
UR  - https://juser.fz-juelich.de/record/203228
ER  -