Home > Publications database > Homogeneous NiSi1−xGex layer formation on strained SiGe with ultrathin Ni layers > print

001     203228
005     20210129220323.0
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100 1 _ |a Liu, Linjie
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245 _ _ |a Homogeneous NiSi1−xGex layer formation on strained SiGe with ultrathin Ni layers
260 _ _ |a [S.l.] @
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520 _ _ |a Homogeneous nickel germanosilicide layers with low sheet resistance have been achieved on highly strained SiGe layers. The layer homogeneity improves with decreasing Ni thickness. Ultrathin Ni layers of 3 nm thermally treated at 400 °C yield to homogeneous germanosilicide layers with a preferential {0 1 0} growth plane and sharp interfaces to the SiGe layer. This is assumed to be energetically driven by lower surface and interface energies due to the increased surface/volume ratio with decreasing layer thickness. The strain in the remaining SiGe layers can be conserved at lower temperatures. However, at higher temperatures, germanosilicidation enhances the strain relaxation.
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700 1 _ |a Knoll, Lars
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700 1 _ |a Wirths, Stephan
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700 1 _ |a Xu, Dawei
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700 1 _ |a Mussler, Gregor
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700 1 _ |a Di, Zengfeng
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700 1 _ |a Zhang, Miao
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700 1 _ |a Mantl, Siegfried
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700 1 _ |a Zhao, Qing-Tai
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773 _ _ |a 10.1016/j.mee.2015.04.083
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