%0 Journal Article
%A Xu, Dawei
%A Cheng, Xinhong
%A Yu, Yuehui
%A Wang, Zhongjian
%A Cao, Duo
%A Xia, Chao
%A Liu, Linjie
%A Trellenkamp, Stefan
%A Mantl, Siegfried
%A Zhao, Qing-Tai
%T Improved LDMOS performance with buried multi-finger gates
%J Microelectronic engineering
%V 122
%@ 0167-9317
%C [S.l.] @
%I Elsevier
%M FZJ-2015-05217
%P 29 - 32
%D 2014
%X SOI LDMOS with buried multi-finger gates (BFG) is proposed and fabricated. The BFG acts as field plate, modulating the lateral electric field distribution in the drift region (off-state) and enhances the carrier accumulation at the surface of the drift region (on-state). The proposed BFG SOI LDMOS shows a 13.6% increase of breakdown voltage, 24.4% reduction of on-resistance and 14.4% increase of the transconductance compared with the reference SOI LDMOS without BFG.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000336871100007
%R 10.1016/j.mee.2014.03.005
%U https://juser.fz-juelich.de/record/203231