Journal Article

FZJ-2015-05217

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Improved LDMOS performance with buried multi-finger gates

Xu, D. (Corresponding author)FZJ* ; Cheng, X. ; Yu, Y. ; Wang, Z. ; Cao, D. ; Xia, C. ; Liu, L.FZJ* ; Trellenkamp, S. ; Mantl, S.FZJ* ; Zhao, Q.-T.FZJ*

2014
Elsevier [S.l.] @

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Please use a persistent id in citations: doi:10.1016/j.mee.2014.03.005

Abstract: SOI LDMOS with buried multi-finger gates (BFG) is proposed and fabricated. The BFG acts as field plate, modulating the lateral electric field distribution in the drift region (off-state) and enhances the carrier accumulation at the surface of the drift region (on-state). The proposed BFG SOI LDMOS shows a 13.6% increase of breakdown voltage, 24.4% reduction of on-resistance and 14.4% increase of the transconductance compared with the reference SOI LDMOS without BFG.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)
3. PGI-8-PT (PGI-8-PT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2015

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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