000203231 001__ 203231
000203231 005__ 20210129220324.0
000203231 0247_ $$2doi$$a10.1016/j.mee.2014.03.005
000203231 0247_ $$2ISSN$$a0167-9317
000203231 0247_ $$2ISSN$$a1873-5568
000203231 0247_ $$2WOS$$aWOS:000336871100007
000203231 037__ $$aFZJ-2015-05217
000203231 041__ $$aEnglish
000203231 082__ $$a620
000203231 1001_ $$0P:(DE-HGF)0$$aXu, Dawei$$b0$$eCorresponding author
000203231 245__ $$aImproved LDMOS performance with buried multi-finger gates
000203231 260__ $$a[S.l.] @$$bElsevier$$c2014
000203231 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1439378011_2020
000203231 3367_ $$2DataCite$$aOutput Types/Journal article
000203231 3367_ $$00$$2EndNote$$aJournal Article
000203231 3367_ $$2BibTeX$$aARTICLE
000203231 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000203231 3367_ $$2DRIVER$$aarticle
000203231 500__ $$3POF3_Assignment on 2016-02-29
000203231 520__ $$aSOI LDMOS with buried multi-finger gates (BFG) is proposed and fabricated. The BFG acts as field plate, modulating the lateral electric field distribution in the drift region (off-state) and enhances the carrier accumulation at the surface of the drift region (on-state). The proposed BFG SOI LDMOS shows a 13.6% increase of breakdown voltage, 24.4% reduction of on-resistance and 14.4% increase of the transconductance compared with the reference SOI LDMOS without BFG.
000203231 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000203231 588__ $$aDataset connected to CrossRef
000203231 7001_ $$0P:(DE-HGF)0$$aCheng, Xinhong$$b1
000203231 7001_ $$0P:(DE-HGF)0$$aYu, Yuehui$$b2
000203231 7001_ $$0P:(DE-HGF)0$$aWang, Zhongjian$$b3
000203231 7001_ $$0P:(DE-HGF)0$$aCao, Duo$$b4
000203231 7001_ $$0P:(DE-HGF)0$$aXia, Chao$$b5
000203231 7001_ $$0P:(DE-Juel1)145655$$aLiu, Linjie$$b6$$ufzj
000203231 7001_ $$0P:(DE-Juel1)128856$$aTrellenkamp, Stefan$$b7
000203231 7001_ $$0P:(DE-Juel1)128609$$aMantl, Siegfried$$b8$$ufzj
000203231 7001_ $$0P:(DE-Juel1)128649$$aZhao, Qing-Tai$$b9$$ufzj
000203231 773__ $$0PERI:(DE-600)1497065-x$$a10.1016/j.mee.2014.03.005$$gVol. 122, p. 29 - 32$$p29 - 32$$tMicroelectronic engineering$$v122$$x0167-9317$$y2014
000203231 8564_ $$uhttps://juser.fz-juelich.de/record/203231/files/1-s2.0-S0167931714000720-main.pdf$$yRestricted
000203231 8564_ $$uhttps://juser.fz-juelich.de/record/203231/files/1-s2.0-S0167931714000720-main.gif?subformat=icon$$xicon$$yRestricted
000203231 8564_ $$uhttps://juser.fz-juelich.de/record/203231/files/1-s2.0-S0167931714000720-main.jpg?subformat=icon-1440$$xicon-1440$$yRestricted
000203231 8564_ $$uhttps://juser.fz-juelich.de/record/203231/files/1-s2.0-S0167931714000720-main.jpg?subformat=icon-180$$xicon-180$$yRestricted
000203231 8564_ $$uhttps://juser.fz-juelich.de/record/203231/files/1-s2.0-S0167931714000720-main.jpg?subformat=icon-640$$xicon-640$$yRestricted
000203231 8564_ $$uhttps://juser.fz-juelich.de/record/203231/files/1-s2.0-S0167931714000720-main.pdf?subformat=pdfa$$xpdfa$$yRestricted
000203231 909CO $$ooai:juser.fz-juelich.de:203231$$pVDB
000203231 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000203231 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bMICROELECTRON ENG : 2013
000203231 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000203231 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000203231 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000203231 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000203231 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000203231 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology
000203231 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000203231 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)145185$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
000203231 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)145655$$aForschungszentrum Jülich GmbH$$b6$$kFZJ
000203231 9101_ $$0I:(DE-Juel1)PGI-8-PT-20110228$$6P:(DE-Juel1)128856$$aPGI-8-PT$$b7
000203231 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128609$$aForschungszentrum Jülich GmbH$$b8$$kFZJ
000203231 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128649$$aForschungszentrum Jülich GmbH$$b9$$kFZJ
000203231 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000203231 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000203231 9141_ $$y2015
000203231 920__ $$lyes
000203231 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000203231 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1
000203231 9201_ $$0I:(DE-Juel1)PGI-8-PT-20110228$$kPGI-8-PT$$lPGI-8-PT$$x2
000203231 980__ $$ajournal
000203231 980__ $$aVDB
000203231 980__ $$aI:(DE-Juel1)PGI-9-20110106
000203231 980__ $$aI:(DE-82)080009_20140620
000203231 980__ $$aI:(DE-Juel1)PGI-8-PT-20110228
000203231 980__ $$aUNRESTRICTED
000203231 981__ $$aI:(DE-Juel1)PGI-8-PT-20110228