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@ARTICLE{Xu:203231,
author = {Xu, Dawei and Cheng, Xinhong and Yu, Yuehui and Wang,
Zhongjian and Cao, Duo and Xia, Chao and Liu, Linjie and
Trellenkamp, Stefan and Mantl, Siegfried and Zhao, Qing-Tai},
title = {{I}mproved {LDMOS} performance with buried multi-finger
gates},
journal = {Microelectronic engineering},
volume = {122},
issn = {0167-9317},
address = {[S.l.] @},
publisher = {Elsevier},
reportid = {FZJ-2015-05217},
pages = {29 - 32},
year = {2014},
abstract = {SOI LDMOS with buried multi-finger gates (BFG) is proposed
and fabricated. The BFG acts as field plate, modulating the
lateral electric field distribution in the drift region
(off-state) and enhances the carrier accumulation at the
surface of the drift region (on-state). The proposed BFG SOI
LDMOS shows a $13.6\%$ increase of breakdown voltage,
$24.4\%$ reduction of on-resistance and $14.4\%$ increase of
the transconductance compared with the reference SOI LDMOS
without BFG.},
cin = {PGI-9 / JARA-FIT / PGI-8-PT},
ddc = {620},
cid = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$ /
I:(DE-Juel1)PGI-8-PT-20110228},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000336871100007},
doi = {10.1016/j.mee.2014.03.005},
url = {https://juser.fz-juelich.de/record/203231},
}