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| Hauptseite > Publikationsdatenbank > Improved LDMOS performance with buried multi-finger gates > print |
| Hauptseite > Publikationsdatenbank > Improved LDMOS performance with buried multi-finger gates > print |
| 001 | 203231 | ||
| 005 | 20210129220324.0 | ||
| 024 | 7 | _ | |2 doi |a 10.1016/j.mee.2014.03.005 |
| 024 | 7 | _ | |2 ISSN |a 0167-9317 |
| 024 | 7 | _ | |2 ISSN |a 1873-5568 |
| 024 | 7 | _ | |a WOS:000336871100007 |2 WOS |
| 037 | _ | _ | |a FZJ-2015-05217 |
| 041 | _ | _ | |a English |
| 082 | _ | _ | |a 620 |
| 100 | 1 | _ | |0 P:(DE-HGF)0 |a Xu, Dawei |b 0 |e Corresponding author |
| 245 | _ | _ | |a Improved LDMOS performance with buried multi-finger gates |
| 260 | _ | _ | |a [S.l.] @ |b Elsevier |c 2014 |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1439378011_2020 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 520 | _ | _ | |a SOI LDMOS with buried multi-finger gates (BFG) is proposed and fabricated. The BFG acts as field plate, modulating the lateral electric field distribution in the drift region (off-state) and enhances the carrier accumulation at the surface of the drift region (on-state). The proposed BFG SOI LDMOS shows a 13.6% increase of breakdown voltage, 24.4% reduction of on-resistance and 14.4% increase of the transconductance compared with the reference SOI LDMOS without BFG. |
| 536 | _ | _ | |0 G:(DE-HGF)POF3-521 |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521) |c POF3-521 |f POF III |x 0 |
| 588 | _ | _ | |a Dataset connected to CrossRef |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Cheng, Xinhong |b 1 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Yu, Yuehui |b 2 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Wang, Zhongjian |b 3 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Cao, Duo |b 4 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Xia, Chao |b 5 |
| 700 | 1 | _ | |0 P:(DE-Juel1)145655 |a Liu, Linjie |b 6 |u fzj |
| 700 | 1 | _ | |0 P:(DE-Juel1)128856 |a Trellenkamp, Stefan |b 7 |
| 700 | 1 | _ | |0 P:(DE-Juel1)128609 |a Mantl, Siegfried |b 8 |u fzj |
| 700 | 1 | _ | |0 P:(DE-Juel1)128649 |a Zhao, Qing-Tai |b 9 |u fzj |
| 773 | _ | _ | |0 PERI:(DE-600)1497065-x |a 10.1016/j.mee.2014.03.005 |g Vol. 122, p. 29 - 32 |p 29 - 32 |t Microelectronic engineering |v 122 |x 0167-9317 |y 2014 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/203231/files/1-s2.0-S0167931714000720-main.pdf |y Restricted |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/203231/files/1-s2.0-S0167931714000720-main.gif?subformat=icon |x icon |y Restricted |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/203231/files/1-s2.0-S0167931714000720-main.jpg?subformat=icon-1440 |x icon-1440 |y Restricted |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/203231/files/1-s2.0-S0167931714000720-main.jpg?subformat=icon-180 |x icon-180 |y Restricted |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/203231/files/1-s2.0-S0167931714000720-main.jpg?subformat=icon-640 |x icon-640 |y Restricted |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/203231/files/1-s2.0-S0167931714000720-main.pdf?subformat=pdfa |x pdfa |y Restricted |
| 909 | C | O | |o oai:juser.fz-juelich.de:203231 |p VDB |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)145185 |a Forschungszentrum Jülich GmbH |b 0 |k FZJ |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)145655 |a Forschungszentrum Jülich GmbH |b 6 |k FZJ |
| 910 | 1 | _ | |0 I:(DE-Juel1)PGI-8-PT-20110228 |6 P:(DE-Juel1)128856 |a PGI-8-PT |b 7 |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)128609 |a Forschungszentrum Jülich GmbH |b 8 |k FZJ |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)128649 |a Forschungszentrum Jülich GmbH |b 9 |k FZJ |
| 913 | 2 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-529H |2 G:(DE-HGF)POF3-500 |v Addenda |x 0 |
| 913 | 1 | _ | |0 G:(DE-HGF)POF3-521 |1 G:(DE-HGF)POF3-520 |2 G:(DE-HGF)POF3-500 |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |v Controlling Electron Charge-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
| 914 | 1 | _ | |y 2015 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0300 |2 StatID |a DBCoverage |b Medline |
| 915 | _ | _ | |0 StatID:(DE-HGF)0100 |2 StatID |a JCR |b MICROELECTRON ENG : 2013 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0200 |2 StatID |a DBCoverage |b SCOPUS |
| 915 | _ | _ | |0 StatID:(DE-HGF)0199 |2 StatID |a DBCoverage |b Thomson Reuters Master Journal List |
| 915 | _ | _ | |0 StatID:(DE-HGF)0110 |2 StatID |a WoS |b Science Citation Index |
| 915 | _ | _ | |0 StatID:(DE-HGF)0150 |2 StatID |a DBCoverage |b Web of Science Core Collection |
| 915 | _ | _ | |0 StatID:(DE-HGF)0111 |2 StatID |a WoS |b Science Citation Index Expanded |
| 915 | _ | _ | |0 StatID:(DE-HGF)1160 |2 StatID |a DBCoverage |b Current Contents - Engineering, Computing and Technology |
| 915 | _ | _ | |0 StatID:(DE-HGF)9900 |2 StatID |a IF < 5 |
| 920 | _ | _ | |l yes |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l JARA-FIT |x 1 |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-8-PT-20110228 |k PGI-8-PT |l PGI-8-PT |x 2 |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-8-PT-20110228 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-8-PT-20110228 |
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