guest ::
| Home > Publications database > Line and Point Tunneling in Scaled Si/SiGe Heterostructure TFETs > print |
| Home > Publications database > Line and Point Tunneling in Scaled Si/SiGe Heterostructure TFETs > print |
| 001 | 203232 | ||
| 005 | 20210129220324.0 | ||
| 024 | 7 | _ | |2 doi |a 10.1109/LED.2014.2320273 |
| 024 | 7 | _ | |2 ISSN |a 0741-3106 |
| 024 | 7 | _ | |2 ISSN |a 1558-0563 |
| 024 | 7 | _ | |a WOS:000338662100004 |2 WOS |
| 037 | _ | _ | |a FZJ-2015-05218 |
| 082 | _ | _ | |a 620 |
| 100 | 1 | _ | |0 P:(DE-HGF)0 |a Schmidt, Matthias |b 0 |e Corresponding author |
| 245 | _ | _ | |a Line and Point Tunneling in Scaled Si/SiGe Heterostructure TFETs |
| 260 | _ | _ | |a New York, NY |b IEEE |c 2014 |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1439377269_2021 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 500 | _ | _ | |3 POF3_Assignment on 2016-02-29 |
| 520 | _ | _ | |a In this letter, we systematically investigate the impact of gate length and channel orientation on the electrical performance of tunneling field-effect transistors (TFETs). We fabricate and characterize Si/SiGe heterostructure TFETs with (p) -doped compressively strained Si0.5Ge0.5 source, intrinsic Si channel, and (n) -doped Si drain. We observe a linear relation of gate length, L (_{mathrm {mathbf {g}}}) , and ON-current, I (_{mathrm {{ON}}}) , which is the first experimental proof of line tunneling occurring in a TFET. TCAD simulations support our observations. After forming gas annealing, short-channel TFETs exhibit different I-V characteristics compared with long-channel devices due to better passivation. |
| 536 | _ | _ | |0 G:(DE-HGF)POF3-521 |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521) |c POF3-521 |f POF III |x 0 |
| 588 | _ | _ | |a Dataset connected to CrossRef |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Schäfer, Anna |b 1 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Minamisawa, Renato |b 2 |
| 700 | 1 | _ | |0 P:(DE-Juel1)125569 |a Buca, Dan Mihai |b 3 |u fzj |
| 700 | 1 | _ | |0 P:(DE-Juel1)128856 |a Trellenkamp, Stefan |b 4 |
| 700 | 1 | _ | |0 P:(DE-HGF)0 |a Hartmann, Jean-Michel |b 5 |
| 700 | 1 | _ | |0 P:(DE-Juel1)128649 |a Zhao, Qing-Tai |b 6 |u fzj |
| 700 | 1 | _ | |0 P:(DE-Juel1)128609 |a Mantl, Siegfried |b 7 |u fzj |
| 773 | _ | _ | |0 PERI:(DE-600)2034325-5 |a 10.1109/LED.2014.2320273 |g Vol. 35, no. 7, p. 699 - 701 |n 7 |p 699 - 701 |t IEEE electron device letters |v 35 |x 1558-0563 |y 2014 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/203232/files/06814298.pdf |y Restricted |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/203232/files/06814298.gif?subformat=icon |x icon |y Restricted |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/203232/files/06814298.jpg?subformat=icon-1440 |x icon-1440 |y Restricted |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/203232/files/06814298.jpg?subformat=icon-180 |x icon-180 |y Restricted |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/203232/files/06814298.jpg?subformat=icon-640 |x icon-640 |y Restricted |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/203232/files/06814298.pdf?subformat=pdfa |x pdfa |y Restricted |
| 909 | C | O | |o oai:juser.fz-juelich.de:203232 |p VDB |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)144017 |a Forschungszentrum Jülich GmbH |b 1 |k FZJ |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)125569 |a Forschungszentrum Jülich GmbH |b 3 |k FZJ |
| 910 | 1 | _ | |0 I:(DE-Juel1)PGI-8-PT-20110228 |6 P:(DE-Juel1)128856 |a PGI-8-PT |b 4 |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)128649 |a Forschungszentrum Jülich GmbH |b 6 |k FZJ |
| 910 | 1 | _ | |0 I:(DE-588b)5008462-8 |6 P:(DE-Juel1)128609 |a Forschungszentrum Jülich GmbH |b 7 |k FZJ |
| 913 | 2 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-529H |2 G:(DE-HGF)POF3-500 |v Addenda |x 0 |
| 913 | 1 | _ | |0 G:(DE-HGF)POF3-521 |1 G:(DE-HGF)POF3-520 |2 G:(DE-HGF)POF3-500 |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |v Controlling Electron Charge-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
| 914 | 1 | _ | |y 2015 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0100 |2 StatID |a JCR |b IEEE ELECTR DEVICE L : 2013 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0200 |2 StatID |a DBCoverage |b SCOPUS |
| 915 | _ | _ | |0 StatID:(DE-HGF)0199 |2 StatID |a DBCoverage |b Thomson Reuters Master Journal List |
| 915 | _ | _ | |0 StatID:(DE-HGF)0110 |2 StatID |a WoS |b Science Citation Index |
| 915 | _ | _ | |0 StatID:(DE-HGF)0150 |2 StatID |a DBCoverage |b Web of Science Core Collection |
| 915 | _ | _ | |0 StatID:(DE-HGF)0111 |2 StatID |a WoS |b Science Citation Index Expanded |
| 915 | _ | _ | |0 StatID:(DE-HGF)1160 |2 StatID |a DBCoverage |b Current Contents - Engineering, Computing and Technology |
| 915 | _ | _ | |0 StatID:(DE-HGF)9900 |2 StatID |a IF < 5 |
| 920 | _ | _ | |l yes |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-8-PT-20110228 |k PGI-8-PT |l PGI-8-PT |x 1 |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-8-PT-20110228 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-8-PT-20110228 |
| Library | Collection | CLSMajor | CLSMinor | Language | Author |
|---|