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@ARTICLE{Stefanov:203233,
      author       = {Stefanov, Stefan and Serra, Carmen and Benedetti,
                      Alessandro and Conde, Jorge Carlos and Werner, Jens and
                      Oehme, Michael and Schulze, Jörg and Wirths, Stephan and
                      Buca, Dan Mihai and Chiussi, Stefano},
      title        = {{S}tructure and composition of
                      {S}ilicon–{G}ermanium–{T}in microstructures obtained
                      through {M}ask {P}rojection assisted {P}ulsed {L}aser
                      {I}nduced {E}pitaxy},
      journal      = {Microelectronic engineering},
      volume       = {125},
      issn         = {0167-9317},
      address      = {[S.l.] @},
      publisher    = {Elsevier},
      reportid     = {FZJ-2015-05219},
      pages        = {18 - 21},
      year         = {2014},
      abstract     = {The possibility to produce virtual
                      Silicon–Germanium–Tin, (Si)GeSn, substrates for growing
                      strained Germanium (s-Ge) or GeSn alloys with high Sn
                      content, is expected to boost the development of new micro
                      and optoelectronic devices. The huge application field,
                      predicted for epitaxial (Si)GeSn alloys would further
                      expand, if such virtual buffer layers could be grown locally
                      through cost efficient processes. New Ge and GeSn based
                      strain engineering platforms, could be developed if
                      concentration gradients of the resulting lateral interfaces
                      can be controlled. (Si)GeSn patterns with alternating
                      lattice parameter, band gap or refractive indices might be
                      useful in group IV based photonic devices as emitters,
                      waveguides or detectors. This contribution extends previous
                      Pulsed Laser Induced Epitaxy (PLIE) studies on the formation
                      of GeSn and SiGeSn alloys to (Si)GeSn patterns and shows
                      first results on Mask Projection assisted PLIE of these
                      alloys. Results on the formation of patterns and the effect
                      of the number of pulses on the resulting interfaces are
                      studied. Special emphasis is given to the lateral
                      compositional interface gradients as well as to the 3-D
                      depth distribution of the elements in the micro patterns.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000338611700005},
      doi          = {10.1016/j.mee.2014.03.017},
      url          = {https://juser.fz-juelich.de/record/203233},
}