Journal Article

FZJ-2015-05219

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Structure and composition of Silicon–Germanium–Tin microstructures obtained through Mask Projection assisted Pulsed Laser Induced Epitaxy

Stefanov, S. (Corresponding author) ; Serra, C. ; Benedetti, A. ; Conde, J. C. ; Werner, J. ; Oehme, M. ; Schulze, J. ; Wirths, S.FZJ* ; Buca, D. M.FZJ* ; Chiussi, S. (Corresponding author)

2014
Elsevier [S.l.] @

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Please use a persistent id in citations: doi:10.1016/j.mee.2014.03.017

Abstract: The possibility to produce virtual Silicon–Germanium–Tin, (Si)GeSn, substrates for growing strained Germanium (s-Ge) or GeSn alloys with high Sn content, is expected to boost the development of new micro and optoelectronic devices. The huge application field, predicted for epitaxial (Si)GeSn alloys would further expand, if such virtual buffer layers could be grown locally through cost efficient processes. New Ge and GeSn based strain engineering platforms, could be developed if concentration gradients of the resulting lateral interfaces can be controlled. (Si)GeSn patterns with alternating lattice parameter, band gap or refractive indices might be useful in group IV based photonic devices as emitters, waveguides or detectors. This contribution extends previous Pulsed Laser Induced Epitaxy (PLIE) studies on the formation of GeSn and SiGeSn alloys to (Si)GeSn patterns and shows first results on Mask Projection assisted PLIE of these alloys. Results on the formation of patterns and the effect of the number of pulses on the resulting interfaces are studied. Special emphasis is given to the lateral compositional interface gradients as well as to the 3-D depth distribution of the elements in the micro patterns.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2015

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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