%0 Journal Article
%A Manheller, M.
%A Trellenkamp, S.
%A Waser, R.
%A Karthäuser, S.
%T Reliable fabrication of 3 nm gaps between nanoelectrodes by electron-beam lithography
%J Nanotechnology
%V 23
%@ 0957-4484
%C Bristol
%I IOP Publ.
%M PreJuSER-20333
%P 125302
%D 2012
%Z The authors gratefully acknowledge the help of N Babajani, MGrates, R Borowski and H Haselier. This work was partially supported by the EU FP7 project 'MOLOC' and the 'Deutsche Forschungsgemeinschaft' (DFG).
%X The reliable fabrication of nanoelectrode pairs with predefined separations in the few nanometer range is an essential prerequisite for future nanoelectronic devices. Here we demonstrate a fine-tuned electron-beam lithographic (EBL) fabrication route which is suitable for defining nanoelectrode pairs with a gap size down to 3 ± 1 nm and with a yield of 55%. This achievement is based on an optimized two-layer resist system in combination with an adopted developer system, as well as on an elaborated nanoelectrode pattern design taking into consideration the EBL inherent proximity effect. Thus, even a structural control in the nanometer scale is achieved in the EBL process.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%$ pmid:22414820
%U <Go to ISI:>//WOS:000301662400005
%R 10.1088/0957-4484/23/12/125302
%U https://juser.fz-juelich.de/record/20333