Journal Article

PreJuSER-20333

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Reliable fabrication of 3 nm gaps between nanoelectrodes by electron-beam lithography

Manheller, M.FZJ* ; Trellenkamp, S.FZJ* ; Waser, R.FZJ* ; Karthäuser, S.FZJ*

2012
IOP Publ. Bristol

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Please use a persistent id in citations: doi:10.1088/0957-4484/23/12/125302

Abstract: The reliable fabrication of nanoelectrode pairs with predefined separations in the few nanometer range is an essential prerequisite for future nanoelectronic devices. Here we demonstrate a fine-tuned electron-beam lithographic (EBL) fabrication route which is suitable for defining nanoelectrode pairs with a gap size down to 3 ± 1 nm and with a yield of 55%. This achievement is based on an optimized two-layer resist system in combination with an adopted developer system, as well as on an elaborated nanoelectrode pattern design taking into consideration the EBL inherent proximity effect. Thus, even a structural control in the nanometer scale is achieved in the EBL process.

Keyword(s): J

Note: The authors gratefully acknowledge the help of N Babajani, MGrates, R Borowski and H Haselier. This work was partially supported by the EU FP7 project 'MOLOC' and the 'Deutsche Forschungsgemeinschaft' (DFG).

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
3. Bioelektronik (PGI-8)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2012

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Database coverage:
; Current Contents - Life Sciences ; Current Contents - Physical, Chemical and Earth Sciences ; JCR ; NCBI Molecular Biology Database ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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