TY  - JOUR
AU  - Manheller, M.
AU  - Trellenkamp, S.
AU  - Waser, R.
AU  - Karthäuser, S.
TI  - Reliable fabrication of 3 nm gaps between nanoelectrodes by electron-beam lithography
JO  - Nanotechnology
VL  - 23
SN  - 0957-4484
CY  - Bristol
PB  - IOP Publ.
M1  - PreJuSER-20333
SP  - 125302
PY  - 2012
N1  - The authors gratefully acknowledge the help of N Babajani, MGrates, R Borowski and H Haselier. This work was partially supported by the EU FP7 project 'MOLOC' and the 'Deutsche Forschungsgemeinschaft' (DFG).
AB  - The reliable fabrication of nanoelectrode pairs with predefined separations in the few nanometer range is an essential prerequisite for future nanoelectronic devices. Here we demonstrate a fine-tuned electron-beam lithographic (EBL) fabrication route which is suitable for defining nanoelectrode pairs with a gap size down to 3 ± 1 nm and with a yield of 55%. This achievement is based on an optimized two-layer resist system in combination with an adopted developer system, as well as on an elaborated nanoelectrode pattern design taking into consideration the EBL inherent proximity effect. Thus, even a structural control in the nanometer scale is achieved in the EBL process.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
C6  - pmid:22414820
UR  - <Go to ISI:>//WOS:000301662400005
DO  - DOI:10.1088/0957-4484/23/12/125302
UR  - https://juser.fz-juelich.de/record/20333
ER  -